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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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IRF820S 데이터시트 - International Rectifier

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IRF820S

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6 Pages

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제조사
IR
International Rectifier IR

DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Surface Mount
• Available in Tape & Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

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제조사
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
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International Rectifier
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Vishay Semiconductors
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
International Rectifier

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