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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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IRF7478QPBF 데이터시트 - International Rectifier

IRF7478QPBF image

부품명
IRF7478QPBF

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  2007  

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9 Pages

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185.5 kB

제조사
IR
International Rectifier IR

Description
These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

● Advanced Process Technology
● Ultra Low On-Resistance
● N Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Lead-Free

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제조사
HEXFET power MOSFET
International Rectifier
HEXFET Power MOSFET.
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier

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