Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode
Power Field-Effect Transistors

33A and 40 A, 60 V - 100 V rDS(0n) = 0.055Ω and 0.08Ω

FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device