Description
The IR51H214 is a high voltage, high speed, self-oscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation.

FEATUREs
■ Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage
■ High side gate drive designed for bootstrap operation
■ Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us
■ Internal oscillator with programmable frequency
■ Zener clamped Vcc for offline operation
■ Half-bridge output is out of phase with RT