IPC26N12NR 데이터시트 - Infineon Technologies
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IPC26N12NR
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Infineon Technologies
DESCRIPTION
• N-channel enhancement mode
• For additional characteristic and max ratings refer to the datasheet of IPP048N12N3 G 1)
• AQL 0.65 for visual inspection according to failure catalogue
• Electrostatic Discharge Sensitive Device according to MIL-STD 883C
• Die bond: soldered or glued
• Backside metallization: NiV system
• Frontside metallization: AlSi system
• Passivation: nitride (only on edge structure)
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제조사
High-power MOS transistor, IGBT transistor gate driver chip
Jingjing Microelectronics Co., Ltd
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