IPB407N30N 데이터시트 - Infineon Technologies
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IPB407N30N
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Infineon Technologies
OptiMOS™ Power-Transistor, 300V
FEATUREs
• N-channel,normal level
• Fast Diode with reduced Qrr
• Optimized for hard commutation ruggedness
• Very low on-resistance RDS(on)
• 175°C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1)for target application
• Halogen-free according to IEC61249-2-21
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제조사
Metal Oxide Semiconductor Field Effect Transistor ( Rev : 2013 )
Infineon Technologies
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