DESCRIPTION
IN24LC04B/08B is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The IN24LC04B/08B also has a page-write capability for up to 16 bytes of data. The IN24LC04B/08B is available in the standard 8-pin DIP.

FEATURES
• Single supply with operation down to 2.5V
• Low power CMOS technology
   - 1 mA active current typical
   - 10 µA standby current typical at 5.5V
   - 5 µA standby current typical at 3.0V
• Organized as two or four blocks of 256 bytes (2x256x8) and (4x256x8)
• Two wire serial interface bus, I2C compatible
• Schmitt trigger, filtered inputs for noise suppression
• Output slope control to eliminate ground bounce
• 100 kHz (2.5V) and 400 kHz (5V) compatibility
• Self-timed write cycle (including auto-erase)
• Page-write buffer for up to 16 bytes
• 2 ms typical write cycle time for page-write
• Hardware write protect for entire memory
• Can be operated as a serial ROM
• Factory programming (QTP) available
• ESD protection > 4,000V
• 1,000,000 ERASE/WRITE cycles guaranteed*
• Data retention > 200 years
• 8-pin DIP
• Temperature range -40 to +85 oC