IHW30N100T 데이터시트 - Infineon Technologies
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IHW30N100T
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Infineon Technologies
Features:
• 1.1V Forward voltage of antiparallel rectifier diode
• Specified for TJmax = 175°C
• TrenchStop® and Fieldstop technology for 1000 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
APPLICATIONs:
• Microwave Oven
• Soft Switching Applications
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Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2008 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2008 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2007 )
Infineon Technologies
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