IHW30N100R 데이터시트 - Infineon Technologies
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IHW30N100R
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12 Pages
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Infineon Technologies
Features:
• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
APPLICATIONs:
• Microwave Oven
• Soft Switching Applications
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제조사
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
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Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
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