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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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IGB50N60T 데이터시트 - Infineon Technologies

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IGB50N60T

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Infineon
Infineon Technologies Infineon

Low Loss IGBT in Trench and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
    - Frequency Converters
    - Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - very high switching speed
    - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

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제조사
Low Loss IGBT in Trench and Fieldstop technology
Unspecified
Low Loss IGBT in Trench and Fieldstop technology
Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
Infineon Technologies
Low Loss IGBT in TrenchStop and Fieldstop technology ( Rev : 2009 )
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology ( Rev : 2015 )
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology ( Rev : 2006 )
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology
Unspecified

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