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HYS64V2100GU-10 데이터시트 - Siemens AG

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HYS64V2100GU-10

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Siemens
Siemens AG Siemens

3.3V 2M x 64-Bit SDRAM Module
3.3V 2M x 72-Bit SDRAM Module
168 pin unbuffered DIMM Modules

The HYS64(72)V21)00G(C)U-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 2M x 64 and 2M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 2M x 8 SDRAMs for the 2M x 64 organisation and an additional SDRAM for the 2M x 72 organisation. Decoupling capacitors are mounted on the PC board.

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications
• 1 bank 2M x 64, 2M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU
• HYS64/72V2100GCU in chip-on-board technique
• Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU

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제조사
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
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3.3V 2M × 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
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1M x 64/72 SDRAM-Module
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3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules
Siemens AG

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