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HYM724010GS 데이터시트 - Siemens AG

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HYM724010GS

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Siemens
Siemens AG Siemens

4M × 72-Bit Dynamic RAM Module (ECC - Module )

The HYM 724000/10GS-60/-70 is a 32 MByte DRAM module organized as 4 194 430 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 5116400BT/BJ 4M × 4 DRAMs in 300 mil wide TSOPII or SOJ- packages mounted together with eighteen 0.2 µF ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-bit buffers/line drivers.

Preliminary Information
• 4 194 304 words by 72-bit ECC - mode organization
• Fast access and cycle time
   50 ns access time
   90 ns cycle time (-50 version)
   60 ns access time
   110 ns cycle time (-60 version)
• Fast page mode capability with
   35 ns cycle time (-50 version)
   40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
   max. 9900 mW active (-50 version)
   max. 8910 mW active (-60 version)
   CMOS – 165 mW standby
   TTL – 275 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 18 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes eighteen 4M × 4 -DRAMs in TSOPII-packages and four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two versions : HYM 724000GS with TSOPII-components (4.06 mm thickness)
                           HYM 724010GS with SOJ-components (8.89 mm thickness)
• 4096 refresh cycles / 64 ms with 12 / 10 addressing
• Gold contact pad
• double sided module with 25.35 mm (1000 mil) height

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제조사
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