The HYB 5118160BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 5118160BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user.

Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Performance:
• Single + 5 V (± 10 %) supply
• Low power dissipation
    max. 1100 active mW (-50 version)
    max. 990 active mW (-60 version)
    max. 880 active mW (-70 version)
    11 mW standby (TTL)
    5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh
• Fast page mode capability
• 2 CAS / 1 WE
• All inputs, outputs and clocks fully TTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Package: P-SOJ-42-1 400 mil