This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation.

Advanced Information
• 8 388 608 words by 8-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
    max. 450 active mW ( HYB 3164805AJ/AT(L)-40)
    max. 360 active mW ( HYB 3164805AJ/AT(L)-50)
    max. 324 active mW ( HYB 3164805AJ/AT(L)-60)
    max. 612 active mW ( HYB 3165805AJ/AT(L)-40)
    max. 468 active mW ( HYB 3165805AJ/AT(L)-50)
    max. 432 active mW ( HYB 3165805AJ/AT(L)-60)
    7.2 mW standby (LVTTL)
    3.24 mW standby (LVMOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh
• Self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805AJ/AT)
    4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)805AJ
    P-TSOPII-32-1 400 mil HYB 3164(5)805AT(L)