The HYB 3116(7)400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3116(7)400BJ/BT to be packaged in a standard SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package.

Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Performance:
• Single + 3.3 V (± 0.3V ) supply
• Low power dissipation
    max. 396 active mW (HYB3117400BJ/BT-50)
    max. 363 active mW (HYB3117400BJ/BT-60)
    max. 330 active mW (HYB3117400BJ/BT-70)
    max. 360 active mW (HYB3116400BJ/BT-50)
    max. 324 active mW (HYB3116400BJ/BT-60)
    max. 288 active mW (HYB3116400BJ/BT-70)
    7.2 mW standby (LV-TTL)
    3.6 mW standby (LV-CMOS)
    720 µW standby for L-version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, Self Refresh and test mode
• Fast page mode capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms for HYB3117400 4096 refresh cycles / 64 ms for HYB3116400
• Plastic Package: P-SOJ-26/24-1 (300 mil) P-TSOPII-26/24-1 (300mil)