This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

FEATUREs
• Logic Level Gate Drive
• 5.8A, 30V
• rDS(ON) = 0.037Ω at ID = 5.8A, VGS = 10V
• rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”