General Description
The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifi er which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

FEATUREs
   Output IP3: +25 dBm
   P1dB: +17 dBm
   Gain: 24 dB
   Supply Voltage: +5 V
   50 Ohm Matched Input/Output
   Die Size: 3.2 x 1.42 x 0.1 mm

Typical Applications
This HMC-ABH241 is ideal for:
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space