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HM64YLB36514BP-6H 데이터시트 - Renesas Electronics

HM64YLB36514 image

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HM64YLB36514BP-6H

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22 Pages

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180.6 kB

제조사
Renesas
Renesas Electronics Renesas

Description
The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119-bump BGA.


FEATUREs
• 2.5 V ± 5% operation and 1.5 V (VDDQ)
• 16M bit density
• Internal self-timed late write
• Byte write control (4 byte write selects, one for each 9-bit)
• Optional ×18 configuration
• HSTL compatible I/O
• Programmable impedance output drivers
• Differential pseudo-HSTL clock inputs
• Asynchronous G output control
• Asynchronous sleep mode
• FC-BGA 119pin package with SRAM JEDEC standard pinout
• Limited set of boundary scan JTAG IEEE 1149.1 compatible
• Protocol: Single differential clock register-latch mode

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제조사
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
Renesas Electronics
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32K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
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64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
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128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
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