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ETC
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[Shenzhen H&M Semiconductor Co.Ltd]
Description
The HM100N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =20V,ID =100A
RDS(ON) <5.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
APPLICATION
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
High density cell design for ultra low Rdson
Unspecified
High density cell design for ultra low Rdson
Unspecified
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