Description
The HCF4051 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in SO-16 and PDIP-16 packages.

FEATUREs
• Low “ON” resistance: 125 Ω (typ.)
• Over 15 V p.p signal-input range for
   VDD - VEE = 15 V
• High “OFF” resistance, channel leakage:
   ± 100 pA (typ.) at VDD - VEE = 18 V
• Binary address decoding on chip
• High degree of linearity: < 0.5 % distortion typ.
   at fIS = 1 KHz, VIS = 5 Vpp, VDD - VSS ≥ 10 V,
   RL = 10 kΩ
• Very low quiescent power dissipation under all
   digital control input and supply conditions:
   0.2 μW (typ.) VDD - VSS = VDD - VEE = 10 V
• Matched switch characteristics:
   RON = 5 Ω (typ.) for VDD - VEE = 15 V
• Wide range of digital and analog signal levels:
   digital 3 to 20, analog to 20 V p.p.
• Quiescent current specified up to 20 V
• 5 V, 10 V and 15 V parametric ratings
• ESD performance
   – HBM: 2 kV
   – MM: 200 V
   – CDM: 750 V
• Input leakage current II = 100 nA (max.) at
   VDD = 18 V, TA = 25 °C
• 100 % tested for quiescent current

APPLICATIONs
• Automotive
• Industrial
• Computer
• Consumer