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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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H7N0307AB-E 데이터시트 - Renesas Electronics

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H7N0307AB-E

상세내역
Silicon N Channel MOS FET High Speed Power Switching

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7 Pages

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77.6 kB

제조사
Renesas
Renesas Electronics Renesas

Silicon N Channel MOS FET High Speed Power Switching


FEATUREs
•  Low on-resistance
    RDS (on)= 4.6 mΩ typ.
•  Low drive current
•  4.5 V gate drive device can be driven from 5 V source

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상세내역
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