H40N03E 데이터시트 - Hi-Sincerity Mocroelectronics
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H40N03E
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Hi-Sincerity Mocroelectronics
Features
• RDS(on)=16mΩ@VGS=10V, ID=20A
• RDS(on)=25mΩ@VGS=4.5V, ID=20A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
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