DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
   H11AA814: 20-300%       H11A817: 50-600%
   H11AA814A: 50-150%      H11A817A: 80-160%
   H11A617A: 40%-80%       H11A817B: 130-260%
   H11A617B: 63%-125%      H11A817C: 200-400%
   H11A617C: 100%-200%     H11A817D: 300-600%
   H11A617D: 160%-320%
• Minimum BVCEO of 70V guaranteed

APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface

H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs