Description
The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The H11A617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATUREs
■ AC input response (H11AA814 only)
■ Compatible to Pb-free IR reflow soldering
■ Compact 4-pin dual in-line package
■ Current transfer ratio in selected groups:
   H11AA814: 20-300% H11A817: 50-600%
   H11AA814A: 50-150% H11A817A: 80-160%
   H11A617A: 40%-80% H11A817B: 130-260%
   H11A617B: 63%-125% H11A817C: 200-400%
   H11A617C: 100%-200% H11A817D: 300-600%
   H11A617D: 160%-320%
■ C-UL, UL and VDE approved
■ High input-output isolation voltage of 5000Vrms
■ Minimum BVCEO of 70V guaranteed

APPLICATIONs
H11AA814 Series
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface

H11A617 and H11A817 Series
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs