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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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GT80J101B 데이터시트 - Toshiba

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GT80J101B

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High Power Switching Applications


·  Enhancement mode type
·  High speed: tf = 0.40 µs (max) (IC =80 A)
·  Low saturation voltage: VCE (sat)= 2.9V (max) (IC =80 A)


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Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
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