Silicon Carbide Schottky Diode

FEATUREs
• Gen4 Thin Chip Technology for Low VF
• Enhanced Surge and Avalanche Robustness
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• Low Reverse Leakage Current
• Temperature Independent Fast Switching
• Positive Temperature Coefficient of VF
• High dV/dt Ruggedness

Advantages
• Improved System Efficiency
• High System Reliability
• Optimal Price Performance
• Reduced Cooling Requirements
• Increased System Power Density
• Zero Reverse Recovery Current
• Easy to Parallel without Thermal Runaway
• Enables Extremely Fast Switching

APPLICATIONs
• High Voltage Sensing
• Solar Inverters
• Electric Vehicles
• High Frequency Converters
• Battery Chargers
• AC/DC Power Supplies
• Anti-Parallel / Free-Wheeling Diode
• LED and HID Lighting