SiC Schottky MPS™

GeneSiC’s new generation of SiC diodes feature the combination of excellent forward and switching characteristics with best-in-class robustness and thermal conductivity.

FEATUREs
➢ High Avalanche (UIS) Capability
➢ Enhanced Surge Current Capability
➢ Superior Figure of Merit QC/IF
➢ Low Thermal Resistance
➢ 175 °C Maximum Operating Temperature
➢ Temperature Independent Fast Switching
➢ Positive Temperature Coefficient of VF

Benefits
➢ Superior System Ruggedness
➢ Improved Circuit Efficiency (Low Power Losses)
➢ Zero Recovery Losses
➢ Smaller Heat Sink Requirements
➢ High Temperature Operation with Low Losses
➢ Zero Recovery Losses
➢ Ease of Paralleling without Thermal Runaway