제조사
GeneSiC Semiconductor, Inc.
Features
• 3300 V Schottky rectifier
• 210 °C maximum operating temperature
• Positive temperature coefficient of VF
• Fast switching speeds
• Superior figure of merit QC/IF
Advantages
• Improved circuit efficiency (Lower overall cost)
• Significantly reduced switching losses compare to Si PiN
diodes
• Ease of paralleling devices without thermal runaway
• Smaller heat sink requirements
• Low reverse recovery current
• Low device capacitance
APPLICATIONs
• Down Hole Oil Drilling, Geothermal Instrumentation
• High Voltage Multipliers
• Military Power Supplies
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode ( Rev : 2018 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2018 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.