IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
• Optimized for Very Low VCEsat
• Low Switching Loss Reduces System Power Dissipation
• 5 s Short−Circuit Capability
• These are Pb−Free Devices

Typical Applications
• Solar Inverters
• Uninterruptible Power Supples (UPS)
• Motor Drives