The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The diode used in anti-parallel with the IGBT is the RHRP3060.

FEATUREs
• 40A, 600V at TC = 25℃
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150℃
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode