General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATUREs
● 20V,11A, RDS(ON) =8.2mΩ @VGS = 4.5V
● Improved dv/dt capability
● Fast switching
● G-S ESD Protection Diode Embedded
● Green Device Available

APPLICATIONs
● Handheld Instruments
● POL Applications
● Battery Protection Applications