제조사
![Fairchild](/logo/Fairchild.png)
Fairchild Semiconductor
![Fairchild](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FEATUREs
• 10.5 A, 400V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ
Fairchild Semiconductor
N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ ( Rev : 2013 )
Fairchild Semiconductor
P-Channel QFET® MOSFET - 500 V, - 1.5 A, 10.5 Ω
Fairchild Semiconductor
P-Channel QFET® MOSFET -100 V, -6.6 A, 530 mΩ
Fairchild Semiconductor
N-Channel QFET® MOSFET 400 V, 0.45 A, 4.2 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω
ON Semiconductor
N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω ( Rev : 2013 )
Fairchild Semiconductor
N-Channel QFET® MOSFET 400 V, 3.4 A, 1.6 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 400 V, 3.4 A, 1.6 Ω
Fairchild Semiconductor
400 V N-channel MOSFET
Kersemi Electronic Co., Ltd.