Description
This  N-Channel  enhancement  mode  power  MOSFET  is produced  using  Fairchild  Semiconductor®’s  proprietary  planar stripe  and  DMOS  technology.  This  advanced  MOSFET technology  has  been  especially  tailored  to  reduce  on-state resistance, and to  provide superior switching performance and high avalanche energy strength. These devices are suitable for switched  mode  power  supplies,  active  power  factor  correction
(PFC), and electronic lamp ballasts.

FEATUREs
• 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID= 3 A
• Low Gate Charge (Typ.30 nC)
• Low Crss (Typ.11 pF)
• 100% Avalanche Tested
• RoHS Compliant