Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

FEATURE
• BVCEO > 60V
• IC = 1A Continuous Collector Current
• ICM = 2A Peak Pulse Current
• RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance
• 500mW Power Dissipation
• hFE Characterized up to 2A for High Current Gain Hold Up
• Complementary PNP Type: FMMT591Q
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)