FMBT5550-H 데이터시트 - Formosa Technology
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FMBT5550-H
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Formosa Technology
600mA Silicon NPN Epitaxial Planar Transistor
FEATUREs
• High collector-emitterbreakdien voltage.
(BVCEO = 140V~ 160V@IC=1mA)
• This device is designed for general purpose high voltage
amplifiers and gas discharge display driving
• Epitaxial planar die construction
• Complememntary PNP type available (FMBT5401)
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT5550-H.
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