General Description
The FM28V100 is a 128K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory.

FEATUREs
1Mbit Ferroelectric Nonvolatile RAM
• Organized as 128Kx8
• High Endurance 100 Trillion (1014) Read/Writes
• NoDelay™ Writes
• Page Mode Operation to 33MHz
• Advanced High-Reliability Ferroelectric Process

Superior to Battery-backed SRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration

SRAM Replacement
• JEDEC 128Kx8 SRAM pinout
• 60 ns Access Time, 90 ns Cycle Time

Low Power Operation
• 2.0V – 3.6V Power Supply
• Standby Current 90 µA (typ)
• Active Current 7 mA (typ)

Industry Standard Configurations
• Industrial Temperature -40° C to +85° C
• 32-pin “Green”/RoHS Package