Description
The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Fast-write time and practically unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM.

FEATUREs
256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• 10 year data retention at 85° C
• Unlimited read/write cycles
• NoDelay™ write
• Advanced high-reliability ferroelectric process

Superior to Battery-backed SRAM
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots

SRAM & EEPROM Compatible
• JEDEC 32Kx8 SRAM & EEPROM pinout
• 70 ns access time
• 130 ns cycle time
• Equal access & cycle time for reads and writes

Low Power Operation
• 2.7V to 3.6V operation
• 15 mA active current
• 15 mA standby current

Industry Standard Configuration
• Industrial temperature -40° C to +85° C
• 28-pin SOP or DIP