FLLD261 데이터시트 - Fairchild Semiconductor
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FLLD261
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Fairchild Semiconductor
HIGH CONDUCTANCE LOW LEAKAGE DIODE
PD . . . .350 mW @ TA = 25 Deg C
BV . . . .200 V (MIN) @ IR = 5 uA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature -55 to +150 Degrees C
Operating Junction Temperature -55 to +150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C 350 mW
Derating Factor per Degree C 2.8 mW
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