DESCRIPTION
FIR7NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses.  It leads the design engineers to their power converters with high efficiency, high power density,and superior thermal behavior. Furthermore , it’s universal applicable, for example, it is suitable for hard and soft hard and soft switching topologies, Lighting， Adapters etc.

FEATURES
• 7A,650V, RDS(on)(typ.)=0.55Ω@VGS=10V
• New revolutionary high voltage technology
• Ultra low gate charge
• Enhanced avalanche capability
• Extreme dv/dt rated
• High peak current capability