General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

FEATUREs
• 4.5 A, 20 V. RDS(ON) = 32 mW @ VGS = 4.5 V RDS(ON) = 45 mW @ VGS = 2.5 V
• ESD protection diode (note 3)
• High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V
• Low profile TSSOP-8 package

APPLICATIONs
• Battery protection
• Load switch
• Power management