General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
   
Features
• 7.7 A, 80 V. RDS(ON) = 29 mΩ @ VGS = 10 V
                      RDS(ON) = 33 mΩ @ VGS = 6 V
• Low gate charge (34nC typical)
• Fast switching speed
• High performance trench technology for extremely
    low RDS(ON)
• High power and current handling capability