General Description
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
■ 5.5 A, 30 V.
   RDS(ON) = 0.030 W @ VGS = 4.5 V
   RDS(ON) = 0.038 W @ VGS = 2.5 V.
■ High density cell design for extremely low RDS(ON).
■ Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V.
■ High power and current handling capability in a widely used surface mount package.
■ Dual MOSFET in surface mount package.