General Description
TheseN-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintainsuperior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FEATUREs
7.5A, 30 V. RDS(ON)= 0.018 W @ VGS= 10 V
RDS(ON)= 0.023 W @ VGS= 4.5 V .
Fast switching speed.
Low gate charge (typical 18nC).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.