General Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FEATUREs
• Q1: N-Channel
   4.5 A, 60 V
      RDS(on) = 55 mΩ @ VGS = 10V
      RDS(on) = 75 mΩ @ VGS = 4.5V
• Q2: P-Channel
   –3.5 A, –60 V
      RDS(on) = 105 mΩ @ VGS = –10V
      RDS(on) = 135 mΩ @ VGS = –4.5V