General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) .

FEATUREs
• 50 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 4.5 V RDS(ON) = 7.5 mΩ @ VGS = 10 V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low RDS(ON)
• 175°C maximum junction temperature rating

APPLICATIONs
• Synchronous rectifier
• DC/DC converter