Description
• This N-Channel MOSFET is produced using Fairchild
   Semiconductor’s advanced PowerTrench process that has
   been especially tailored to minimize the on-state resistance
   and yet maintain superior switching performance.

FEATUREs
• RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
• High performance trench technology for extermly low RDS(on)
• High power and current handing capability
• RoHS compliant