General Description
This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

FEATUREs
◾ Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A
◾ Typ Qg(TOT) = 78nC at VGS = 10V
◾ Fast switching speed
◾ Low gate charge
◾ High performance trench technology for extremely low
   RDS(on)
◾ High power and current handling capability
◾ Qualified to AEC Q101
◾ RoHS Compliant

APPLICATIONs
◾ PDP application
◾ Hybrid Electric Vehicle DC/DC converters