General Description
The FDFS2P102 combines the exceptional performance of Fairchild's high cell densityMOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

FEATUREs
• –3.3 A, –20 V. RDS(ON)= 0.125 Ω@ VGS= –10 V
                     RDS(ON)= 0.200 Ω@ VGS= –4.5 V.
• VF < 0.39 V @ 1 A (TJ = 125^oC).
  VF < 0.47 V @ 1 A.
  VF < 0.58 V @ 2 A.
• Schottky and MOSFET incorporated into single power surface mount SO-8 package.
• Electrically independent Schottky and MOSFET pinout for design flexibility.

APPLICATIONs
• DC/DC converters
• Load Switch
• Motor Drives