General Description
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for
superior switching performance.

FEATUREs
• -1.8 A, -30 V. RDS(on)= 0.170 Ω @ VGS = -10 V
                    RDS(on) = 0.280 Ω @ VGS = -4.5 V
• Low gate charge (2.3nC typical).
• Fast switching speed.
•High performance trench technology for extremely low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

APPLICATIONs
• Load switch
•Battery protection
•Power management