Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

FEATUREs
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 36 mΩ
• Ultra Low Gate Charge (Typ. Qg = 277 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
• 100% Avalanche Tested
• RoHS Compliant